PMD18K SERIES
PMD19K SERIES
NPN
PNP
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PMD18K, PMD19K
series types are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for power switching applications.
These devices are designed to be electrical/mechanical
equivalents to Lambda part numbers.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCER
VCEO
VEBO
Continuous Base Current
Power Dissipation (TC=50°C)
Operating and Storage Junction Temperature
Thermal Resistance
PMD18K100
PMD19K100
100
UNITS
V
80
100
V
80
100
V
5.0
V
IC
30
A
ICM
IB
60
A
750
mA
Continuous Collector Current
Peak Collector Current
PMD18K80
PMD19K80
80
PD
TJ, Tstg
JC
ICER
IEBO
BVCER
BVCER
IC=100mA, RBE=2.2kΩ (PMD18K, 19K80)
IC=100mA, RBE=2.2kΩ (PMD18K, 19K100)
IC=100mA (PMD18K, 19K80)
BVCEO
BVCEO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
IC=100mA (PMD18K, 19K100)
IC=15A, IB=60mA
0.625
°C/W
MAX
10
UNITS
mA
10
VCE=67V, RBE=2.2kΩ (PMD18K, 19K100)
VEB=5.0V
W
°C
mA
3.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICER
VCE=54V, RBE=2.2kΩ (PMD18K, 19K80)
240
-65 to +200
mA
80
V
100
V
80
V
100
V
2.0
IC=15A, IB=60mA
VCE=3.0V, IC=15A
V
2.8
V
2.8
V
VCE=3.0V, IC=15A (PMD18K series)
VCE=3.0V, IC=15A (PMD19K series)
1.0K
20K
hFE
800
20K
hfe
fT
VCE=3.0V, IC=9.0A, f=1.0kHz
VCE=3.0V, IC=9.0A, f=1.0MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
4.0
MHz
600
pF
R1 (2-October 2012)