PD-91415G
IRHM9160
JANSR2N7425
100V, P-CHANNEL
REF: MIL-PRF-19500/660
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
™
®
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM9160
100K Rads (Si) 0.073Ω
IRHM93160
300K Rads (Si) 0.073Ω
ID
QPL Part Number
-35A*
JANSR2N7425
-35A*
JANSF2N7425
International Rectifier’s RAD-Hard HEXFET TM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @VGS = -12V, TC = 25°C
ID @VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-35*
-24
-140
250
2.0
±20
500
-35
25
-16
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
g
*Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/20/05
