140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF544
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
Silicon NPN, high Frequency, high breakdown Transistor
•
Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
•
High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
•
High FT - 1400 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
70
Vdc
VCBO
Collector-Base Voltage
100
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
400
mA
3.5
20
Watts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
