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1N4119
1N4099 THRU 1N4135 SILICON ZENER DIODE LOW NOISE 6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Power Dissipation Operating and Storage Junction Temperature UNITS PD TJ, Tstg 250 mW -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) ZENER VOLTAGE VZ @ IZT TYPE MIN NOM MAXIMUM REVERSE CURRENT TEST CURRENT MAX MAXIMUM ZENER IMPEDANCE IZT ZZT @ IZT IR @ VR MAXIMUM ZENER CURRENT MAXIMUM NOISE DENSITY IZM ND @ 250μA V V V μA Ω μA V mA μV/ Hz 1N4099 6.460 6.8 7.140 250 200 10 5.2 35.0 40 1N4100 7.125 7.5 7.875 250 200 10 5.7 31.8 40 1N4101 7.790 8.2 8.610 250 200 1.0 6.3 29.0 40 1N4102 8.265 8.7 9.135 250 200 1.0 6.7 27.4 40 1N4103 8.645 9.1 9.555 250 200 1.0 7.0 26.2 40 1N4104 9.50 10 10.50 250 200 1.0 7.6 24.8 40 1N4105 10.45 11 11.55 250 200 0.05 8.5 21.6 40 1N4106 11.40 12 12.60 250 200 0.05 9.2 20.4 40 1N4107 12.35 13 13.65 250 200 0.05 9.9 19.0 40 1N4108 13.30 14 14.70 250 200 0.05 10.7 17.5 40 1N4109 14.25 15 15.75 250 100 0.05 11.4 16.3 40 1N4110 15.20 16 16.80 250 100 0.05 12.2 15.4 40 1N4111 16.15 17 17.85 250 100 0.05 13.0 14.5 40 1N4112 17.10 18 18.90 250 100 0.05 13.7 13.2 40 1N4113 18.05 19 19.95 250 150 0.05 14.5 12.5 40 1N4114 19.00 20 21.00 250 150 0.01 15.2 11.9 40 1N4115 20.90 22 23.10 250 150 0.01 16.8 10.8 40 1N4116 22.80 24 25.20 250 150 0.01 18.3 9.9 40 1N4117 23.75 25 26.25 250 150 0.01 19.0 9.5 40 1N4118 25.65 27 28.35 250 150 0.01 20.5 8.8 40 1N4119 26.60 28 29.40 250 200 0.01 21.3 8.5 40 1N4120 28.50 30 31.50 250 200 0.01 22.8 7.9 40 1N4121 31.35 33 34.65 250 200 0.01 25.1 7.2 40 R1 (4-February 2014)
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