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2N3066
2N3066 Transistors N-Channel JFET Military/High-RelN V(BR)DSS (V) V(BR)GSS (V)50 I(D) Max. (A)4.0m I(G) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200# I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)4.0m V(GS)off Max. (V)10 @Vgs (test) (V)0 @V(DS) (V) (Test Condition)30 @I(D) (A) (Test Condition)500p I(DSS) Min. (A)800u I(DSS) Max. (A)4.0m @V(DS) (V) (Test Condition)30 r(DS)on Max. (Ohms) g(fs) Min. (S) Trans. conduct.400ué g(fs) Max; (S) Trans. conduct;1.0mé
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