IS62WV20488ALL
IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER
CMOS STATIC RAM
FEATURES
• High-speed access times:
25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
– VDD 1.65V to 2.2V (IS62WV20488ALL)
speed = 35ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS62WV20488BLL)
speed = 25ns for Vcc = 2.4V to 3.6V
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial Temperature Support
• Lead-free available
JANUARY 2008
DESCRIPTION
The ISSI IS62WV20488ALL/BLL is a high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The
IS62WV20488ALL/BLL is fabricated using ISSI's highperformance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
The IS62WV20488ALL/BLL operates from a single
power supply and all inputs are TTL-compatible.
The IS62WV20488ALL/BLL is available in 48 ball mini
BGA and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
DECODER
2M X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
A0-A20
COLUMN I/O
VDD
GND
I/O0-I/O7
CS2
CS1
OE
CONTROL
CIRCUIT
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
01/18/08
1
