MJE350
MJE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE340
TO-126
1
1. Emitter
2.Collector
3.Base
..PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
- 300
Units
V
- 300
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
-5
V
- 500
mA
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = - 1mA, IB = 0
Min.
-300
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = - 300V, IE = 0
-100
µA
IEBO
Emitter Cut-off Current
VBE = - 3V, IC = 0
-100
µA
hFE
DC Current Gain
VCE = - 10V, IC = - 50mA
©2001 Fairchild Semiconductor Corporation
30
240
Rev. A1, February 2001
