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<-Conductoi
VN1304
VN1306
VN1310
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV DSS /
n
•^DSfON)
'o(ON)
BVDGS
(max)
(min)
TO-39
TO-92
40V
8.00
0.5A
—
—
60V
8.00
0.5A
VN1306N2
—
100V
8.00
0.5A
—
VN1310N3
Order Number / Package
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C|SS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Package Options
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
S O D
Drain-to-Source Voltage
BV,DSS
Drain-to-Gate Voltage
BV,DOS
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
TO-39
Case: DRAIN
TO-92
±20V
-55°Cto+150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
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