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2N585
2N585 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)24 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.20 h(FE) Max. Current gain. @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)200m h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) f(T) Min. (Hz) Transition Freq3.0M¦ @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)6.0 C(obo) (Max) (F)20p @V(CB) (V) (Test Condition)10
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