Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC167A, BC167B
BC168A, BC168B, BC168C
BC169B, BC169C
TO-92
Plastic Package
AF Pre and Driver Stages as well as for Universal Application.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VCEO
Collector -Emitter Voltage
VCES
Collector -Emitter Voltage
BC167
45
BC168
20
BC169
20
UNITS
V
50
30
30
V
VEBO
6.0
5
5
V
Collector Current Continuous
IC
100
100
50
mA
Collector Peak Current
ICM
200
200
IB
50
50
Emitter -Base Voltage
Base Current
Power Dissipation @ Ta=25ºC
Ptot
Storage Junction
Tstg
5
mA
300
mW
-55 to +150
ºC
Tj
THERMAL RESISTANCE
Junction to Ambient
150
ºC
Rth(j-a)
Junction Temperature
420
K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
BVCEO IC=2mA,IB=0
45
Collector -Emitter Voltage
BC167
BC168, 169
20
Emitter-Base Voltage
mA
BC167
BC168, 169
BVEBO
IE=1µA, IC=0
TYP
MAX
UNITS
V
V
6
5
V
V
Collector-Cut off Current
ICES
VCE=50V,VBE=0
15
nA
15
nA
BC167
VCE=30V,VBE=0
Ta =125ºC
VCE=50V,VBE=0
4
µA
BC168, 169
VCE=30V,VBE=0
4
µA
BC167
BC168, 169
Continental Device India Limited
Data Sheet
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