JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
BC184
TRANSISTOR (NPN)
1.COLLECTOR
FEATURES
General Purpose Switching and Amplification.
2.BASE
3 EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
350
mW
Thermal Resistance From Junction To Ambient
357
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.01mA,IE=0
45
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=2mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
15
nA
Collector cut-off current
ICEO
VCE=30V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
15
nA
DC current gain
hFE
VCE=5V, IC=2mA
240
900
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=5mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA,IB=5mA
1.2
V
Transition frequency
fT
VCE=5V,IC=10mA,f=100MHz
Emitter input capacitance
Cib
VBE=0.5V,IC=0, f=1MHz
Collector output capacitance
Cob
150
MHz
VCB=10V,IC=0, f=1MHz
8
pF
5
pF
CLASSIFICATION OF hFE
RANK
BC184B
BC184C
RANGE
240-500
450-900
A,Dec,2010