SUM90P10-19L
Vishay Siliconix
P-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.019 at VGS = - 10 V
- 90
0.021 at VGS = - 4.5 V
- 100
ID (A)
- 85
Qg (Typ.)
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
97 nC
S
TO-263
G
Drain Connected to Tab
G
D
S
D
Top View
P-Channel MOSFET
Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 125 °C
TA = 25 °C
TA = 125 °C
Limit
- 100
± 20
- 90
- 52
ID
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 125 °C
TA = 25 °C
TA = 125 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 9b, c
- 70
245
375
125
IS
Avalanche Current
Single-Pulse Avalanche Energy
Continuous Source-Drain Diode Current
V
- 17.2b, c
- 9.9b, c
- 90
- 250
IDM
Pulsed Drain Current
Unit
mJ
13.6b, c
4.5b, c
- 55 to 175
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb, d
Maximum
Maximum Junction-to-Case (Drain)
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
8
0.33
Maximum
11
0.4
Unit
°C/W
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