IRFB9N60A, SiHFB9N60A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
600
RDS(on) (Ω)
VGS = 10 V
0.75
Qg (Max.) (nC)
49
Qgs (nC)
13
Qgd (nC)
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
20
Configuration
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
• Compliant to RoHS Directive 2002/95/EC
D
APPLICATIONS
TO-220AB
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G
• High Speed Power Switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
D
G
S
• Active Clamped Forward
S
• Main Switch
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFB9N60APbF
SiHFB9N60A-E3
IRFB9N60A
SiHFB9N60A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
9.2
5.8
A
37
Soldering Recommendations (Peak Temperature)
Mounting Torque
6-32 or M3 screw
17
mJ
PD
170
W
dV/dt
for 10 s
A
5.0
V/ns
TJ, Tstg
Operating Junction and Storage Temperature Range
mJ
9.2
EAR
dV/dtc
290
IAR
TC = 25 °C
W/°C
EAS
Energya
Maximum Power Dissipation
Peak Diode Recovery
V
1.3
Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche
UNIT
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12).
c. ISD ≤ 9.2 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91103
S11-0514-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB9N60A, SiHFB9N60A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
1
4.7V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
TJ = 25 ° C
1
0.1
4.0
100
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
10
4.7V
20µs PULSE WIDTH
TJ = 150 ° C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91103
S11-0514-Rev. C, 21-Mar-11
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
1
5.0
6.0
7.0
8.0
9.0
10.0
Fig. 3 - Typical Transfer Characteristics
TOP
1
V DS = 50V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
TJ = 150 ° C
ID = 9.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000