1N5807US/1N5809US/1N5811US
Superfast Recovery Diodes
Surface Mount (US)
POWER DISCRETES
Description
Features
Quick reference data
u
u
u
u
VR 50 -150 V
IF 1N5807US to 1N5811US = 6A
trr 1N5807US to 1N5811US = 30nS
IR 1N5807US to 1N5811US = 5µA
Very low reverse recovery time
Hermetically sealed non-cavity construction
Soft, non-snap, off recovery characteristics
Very low forward voltage drop
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX , JANTXV
and JANS versions.
Electrical Specifications
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol
1N5807US
1N5809US
1N5811US
Units
Working Reverse Voltage
VRWM
50
100
150
V
Repetitive Reverse Voltage
VRRM
50
100
150
V
Average Forward Current
(@ 75°C lead length = 0.375')
IF(AV)
6.0
A
Repetitive Surge Current
(@ 55°C in free air lead length = 0.375')
IFRM
25
A
Non-Repetitive Surge Current
(tp = 8.3mS @ Vr & TJMAX)
IFSM
125
A
Storage Temperature Range
TSTG
-65 to +175
°C
Average Forward Current Max
(pcb mounted: TA = 55°C)
Sine wave
Square wave (d = 0.5)
IF(AV)
IF(AV)
1.7
1.8
A
I2t for fusing (t = 8.3mS) max
I2t
32
A 2S
Forward Voltage Drop max
@ TJ = 25°C
VF
0.875 @ 4A
V
Reverse Current max
@ VWRM, TJ = 25°C
@ VWRM, TJ = 100°C
IR
IR
5.0
150
µA
Reverse Recovery Time max
(1.0A IF to 1.0A IRM recover to 0.25A IRM(REC))
trr
30
nS
Junction Capacitance typ
@ VR = 5V f = 1MHz
CJ
60
pF
R θJEC
6.5
°C/W
Thermal Resistance to end cap
Revision: May 26, 2006
1
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