• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC
PER MIL-PRF-19500/437
• ZENER DIODE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B
• 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD5518B
thru
CD5546B
23 MILS
15 MILS
MAXIMUM RATINGS
23 MILS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Forward Voltage @ 200 mA: 1.5 Volts Maximum
JEDEC
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ @ lZT
VOLTS
(Note 1)
CD5518B
CD5519B
CD5520B
CD5521B
CD5522B
3.3
3.6
3.9
4.3
4.7
CD5523B
CD5524B
CD5525B
CD5526B
CD5527B
5.1
5.6
6.2
6.8
7.5
CD5528B
CD5529B
CD5530B
CD5531B
CD5532B
MAX. ZENER
IMPEDANCE
TEST
CURRENT
lZT
mAdc
20
20
20
20
10
ZZT @ lZT
OHMS
MAX. REVERSE
LEAKAGE CURRENT
LOW
VZ
VR
³VZ
VOLTS
CURRENT
VOLTS
lR
REGULATION
FACTOR
(Note 3)
µ Adc
(Note 2)
15 MILS
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed
lZL
mAdc
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
1.0
1.0
1.0
1.5
2.0
0.90
0.90
0.90
0.75
0.60
2.0
2.0
2.0
2.0
1.0
5.0
3.0
1.0
1.0
1.0
26
30
30
30
35
2.0
2.0
1.0
1.0
0.5
2.5
3.5
5.0
6.2
6.8
0.65
0.30
0.20
0.10
0.05
0.25
0.25
0.01
0.01
0.01
8.2
9.1
10.0
11.0
12.0
1.0
1.0
1.0
1.0
1.0
40
45
60
80
90
0.5
0.1
0.05
0.05
0.05
7.5
8.2
9.1
9.9
10.8
0.05
0.05
0.10
0.20
0.20
0.01
0.01
0.01
0.01
0.01
CD5533B
CD5534B
CD5535B
CD5536B
CD5537B
13.0
14.0
15.0
16.0
17.0
1.0
1.0
1.0
1.0
1.0
90
100
100
100
100
0.01
0.01
0.01
0.01
0.01
11.7
12.6
13.5
14.4
15.3
0.20
0.20
0.20
0.20
0.20
0.01
0.01
0.01
0.01
0.10
CD5538B
CD5539B
CD5540B
CD5541B
CD5542B
18.0
19.0
20.0
22.0
24.0
1.0
1.0
1.0
1.0
1.0
100
100
100
100
100
0.01
0.01
0.01
0.01
0.01
16.2
17.1
18.0
19.8
21.6
0.20
0.20
0.20
0.25
0.30
0.01
0.01
0.01
0.01
0.01
GOLD THICKNESS... .....4,000 Å Min
CD5543B
CD5544B
CD5545B
CD5546B
25.0
28.0
30.0
33.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
22.4
25.2
27.0
29.7
0.35
0.40
0.45
0.50
0.01
0.01
0.01
0.01
CIRCUIT LAYOUT DATA:
For Zener operation, cathode
must be operated positive with
respect to anode.
NOTE 1 Suffix “B” voltage range equals nominal Zener voltage + 5%. Suffix “A” equals
+ 10%. No Suffix equals + 20%. Zener voltage is read using a pulse
measurement, 10 milliseconds maximum. "C" suffix = + 2% and "D" suffix = +1%.
NOTE 2 Zener impedance is derived by superimposing on lZT A 60Hz rms a.c.
current equal to 10% of lZT.
BACKSIDE IS CATHODE
DESIGN DATA
METALLIZATION:
Top: (Anode)......................Al
Back: (Cathode)............ ...Au
AL THICKNESS............25,000 Å Min
CHIP THICKNESS.............. ....10 Mils
TOLERANCES: ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.1 mils.
NOTE 3 ³VZ is the maximum difference between VZ @ 1ZT and VZ at 1ZL measured
with the device junction in thermal equilibrium at an ambient temperature of
+25° + 3°C.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
209
