SM6G45,SM6J45,SM6G45A,SM6J45A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6G45,SM6J45,SM6G45A,SM6J45A
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S ON−State Current
: IT (RMS) = 6A
l High Commutating (dv / dt)
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−
State Voltage
SM6G45
SM6G45A
SM6J45
SM6J45A
SYMBOL
V
600
IT (RMS)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
ITSM
2
UNIT
400
VDRM
R.M.S On−State Current
(Full Sine Waveform Tc = 104°C)
I t Limit Value
RATING
2
6
60 (50Hz)
66 (60Hz)
A
A
2
I t
18
A s
Critical Rate of Rise of On−State
Current
di / dt
50
A / µs
Peak Gate Power Dissipation
PGM
5
W
PG (AV)
0.5
VGM
10
V
Peak Gate Current
IGM
2
A
Tj
−40~125
°C
Tstg
−40~125
TO−220AB
―
13−10G1A
W
Peak Gate Voltage
JEDEC
JEITA
TOSHIBA
°C
Average Gate Power Dissipation
Junction Temperature
Storage Temperature Range
1
Weight: 2.0g
2001-07-13