HOME>在庫検索>在庫情報
QS5K2TR
QS5K2 Transistors 2.5V Drive Nch+Nch MOSFET QS5K2 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT5 1.0MAX 2.9 1.9 0.95 0.95 Features 1) Low On-resistance. 3) Space saving, small surface mount package (TSMT5). (2) 0.7 (4) (3) 1.6 2.8 (5) 0.85 0.4 Applications Switching 0.16 Each lead has same dimensions Abbreviated symbol : K02 Packaging specifications Inner circuit Package Type 0~0.1 0.3~0.6 (1) (5) Taping TR Code Basic ordering unit (pieces) (4) ∗2 ∗2 3000 QS5K2 ∗1 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Gate (2) Tr1 Source Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±2.0 ±8.0 0.8 3.2 1.25 0.9 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Limits 100 139 Unit °C/W °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ ∗ Mounted on a ceramic board Rev.A 1/3 QS5K2 Transistors Electrical characteristics curves Ciss 100 Coss Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed tf 100 td(off) td(on) 10 tr Crss 10 0.01 0.1 1 10 1 0.01 100 RG=10Ω Pulsed 4 3 2 1 1 10 0 Fig.3 Dynamic Input Characteristics 75°C 25°C −25°C 0.01 10 Ta=25°C Pulsed SOURCE CURRENT : IS (A) Ta=125°C ID=2A 200 ID=1A 100 0 0.001 0.0 0.5 1.0 1.5 2.0 0 2.5 Ta=125°C 75°C 25°C −25°C 100 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=4.5V Pulsed 1 3 4 5 6 7 8 9 10 1000 0.01 0.0 VGS=4.0V Pulsed 75°C 25°C −25°C 100 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=125°C 10 0.1 25°C −25°C 0.1 Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate source Voltage Fig.4 Typical Transfer Characteristics 10 0.1 2 75°C 1 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) 1000 1 VGS=0V Pulsed Ta=125°C 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.1 3 Fig.2 Switching Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) VDS=10V Pulsed 1 2 TOTAL GATE CHARGE : Qg (nC) 300 10 1 DRAIN CURRENT : ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage DRAIN CURRENT : ID (A) Ta=25°C VDD=15V 5 ID=2A 0 0.1 DRAIN-SOURCE VOLTAGE : VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 6 GATE-SOURCE VOLTAGE : VGS (V) 1000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1000 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.A 3/3
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
お買い上げ小計が1万円以上の場合は送料はサービスさせて頂きます。1万円未満の場合、また時間指定便はお客様負担となります。(送料は地域により異なります。)