KSC5803
KSC5803
High Voltage Color Display Horizontal
Deflection Output
(No Damper Diode)
•
•
•
•
High Breakdown Voltage : BVCBO=1500V
High Speed Switching : tF=0.1µs (Typ.)
Wide S.O.A
For C-Monitor(85KHz)
TO-3PF
1
1.Base
2.Collector
3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
1500
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
800
V
6
IC
Collector Current (DC)
12
V
A
ICP
Collector Current (Pulse)
24
A
PC
Collector Dissipation (TC=25°C)
70
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current
Test Condition
VCE = 1400V, VBE=0
Min.
Typ.
Max.
1
Units
mA
ICBO
Collector Cut-off Current
VCE= 800V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
1
mA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 8A, IB = 2A
3
VBE(sat)
Base-Emitter Saturation Voltage
IC = 8A, IB = 2A
1.5
V
tSTG
Storage Time
4
µs
tF
Fall Time
VCC = 200V, IC = 7A
IB1 = 1.4A, IB2= - 2.8A
RL = 28.6Ω
0.3
µs
©2000 Fairchild Semiconductor International
15
5.5
40
8.5
V
Rev. A, February 2000