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SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % (300 W above 78 V) DO-214AC (SMA) • Excellent clamping capability • Very fast response time • Low incremental surge resistance PRIMARY CHARACTERISTICS • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C VBR uni-directional 6.40 V to 231 V VBR bi-directional 6.40 V to 231 V • AEC-Q101 qualified VWM 5.0 V to 188 V PPPM 400 W, 300 W • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 IFSM 40 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AC (SMA) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. DEVICES FOR BI-DIRECTION APPLICATIONS MECHANICAL DATA For bi-directional use CA suffix (e.g. SMAJ10CA). Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Electrical characteristics apply in both directions. Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Peak pulse current with a waveform Peak forward surge current 8.3 ms single half sine-wave uni-directional only Operating junction and storage temperature range (2) 400 W IPPM (1) UNIT PPPM Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) VALUE See next table A IFSM 40 A TJ, TSTG - 55 to + 150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 300 W above 78 V A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 09-Dec-13 Document Number: 88390 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOT
1999年8月4日、ディスクリート・標準アナログ・標準ロジックなどの半導体部門をオン・セミコンダクターとして分社化した。これは、イリジウムコミュニケーションズ倒産の損失をカバーするために分社化された。
ON Semiconductor
U.S.A
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