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部品型式

71016

製品説明
仕様・特性

CMOS Static RAM 1 Meg (64K x 16-Bit) Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71016S/NS Description 64K x 16 advanced high-speed CMOS Static RAM Equal access and cycle times – Commercial and Industrial: 12/15/20ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly TTLcompatible Low power consumption via chip deselect Upper and Lower Byte Enable Pins Commercial and industrial product available in 44-pin Plastic SOJ package and 44-pin TSOP package The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. The IDT71016 has an output enable pin which operates as fast as 7ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ and 44-pin TSOP Type II. Functional Block Diagram OE A0 - A15 Output Enable Buffer Address Buffers Row / Column Decoders I/O 15 CS 8 Chip Enable Buffer High Byte I/O Buffer , 8 I/O 8 WE Write Enable Buffer 16 64K x 16 Memory Array Sense Amps and Write Drivers I/O 7 8 Low Byte I/O Buffer 8 I/O 0 BHE Byte Enable Buffers BLE 3210 drw 01 OCTOBER 2008 1 ©2007 Integrated Device Technology, Inc. DSC-3210/10 IDT71016, CMOS Static RAM 1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges Absolute Maximum Ratings(1) Symbol Rating Value Recommended Operating Temperature and Supply Voltage Unit V Terminal Voltage with Respect to GND -0.5 to +7.0 TA Operating Temperature 0 to +70 Grade C TBIAS Temperature Under Bias -55 to +125 Storage Temperature -55 to +125 Power Dissipation 1.25 W IOUT DC Output Current 50 0°C to +70°C 0V 5.0V ± 10% –40°C to +85°C 0V 5.0V ± 10% 3210 tbl 04 o PT VCC o TSTG GND Industrial o Temperature Commercial VTERM (2) mA C Recommended DC Operating Conditions C Symbol Parameter Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V VCC Supply Voltage GND Ground VIH Input High Voltage 2.2 ____ VDD +0.5 V VIL Input Low Voltage -0.5(1) ____ 0.8 V 3210 tbl 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC + 0.5V. 3210 tbl 05 NOTE: 1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle. Capacitance (TA = +25° C, f = 1.0MHz, SOJ/TSOP Package) Parameter(1) Symbol CI/O I/O Capacitance Unit VIN = 3dV Input Capacitance Max. 6 pF VOUT = 3dV CIN Conditions 7 pF 3210 tbl 06 NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. DC Electrical Characteristics (VCC = 5.0V ± 10%, Commercial and Industrial Temperature Range) Symbol |ILI| |ILO| Parameter Test Conditions Min. Max. Unit Input Leakage Current VCC = Max., VIN = GND to VCC ___ 5 µA Output Leakage Current VCC = Max., CS = VIH, VOUT = GND to VCC ___ 5 µA 0.4 V ___ V VOL Output Low Voltage IOL = 8mA, VCC = Min. ___ VOH Output High Voltage IOH = -4mA, VCC = Min. 2.4 3210 tbl 07 DC Electrical Characteristics(1) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V) 71016S12 Symbol Parameter 71016S15 71016S20 Com'l. Ind. Com'l. Ind. Com'l. Ind. Unit ICC Dynamic Operating Current CS < VIL, Outputs Open, V CC = Max., f = fMAX(2) 210 210 180 180 170 170 mA ISB Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open, V CC = Max., F = fMAX(2) 60 60 50 50 45 45 mA ISB1 Standby Power Supply Current (CMOS Level) CS > VHC, Outputs Open, VCC = Max., f = 0(2) VIN < VLC or VIN > VHC 10 10 10 10 10 10 mA NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing . 6.42 3 3210 tbl 08

ブランド

IDT

会社名

Integrated Device Technology, Inc.

本社国名

U.S.A

事業概要

通信・コンピュータ・一般向け機器などで使用する低消費電力で高性能なアナログ-デジタル混在半導体部品の設計と製造を行っている。主にOEM製品を扱っている。 RF(無線)、高性能タイミング、メモリーインタフェース、リアルタイムインターコネクト、オプティカルインターコネクト、ワイヤレス給電、スマートセンサーを製造するメーカー

供給状況

 
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データシート
pdf

提携先在庫情報

型式 数量 D/C・lead 備考 選択
71016S12YG 18個    
71016S20PHI 174個    
71016S20Y 92個    
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