Agilent AT-42086
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Features
• High Output Power:
20.5 dBm Typical P1 dB at 2.0 GHz
Agilent’s AT-42086 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise
match near 50 Ω up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42086 bipolar transistor is
fabricated using Agilent’s 10 GHz fT
Self-Aligned-Transistor (SAT)
process. The die is nitride passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
86 Plastic Package
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Pin Connections
EMITTER
• Lead-free Option Available
4
420
Description
• High Gain at 1 dB
Compression:
13.5 dB Typical G1 dB at 2.0 GHz
BASE
1
COLLECTOR
3
2
EMITTER
