DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
~
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
~
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style DFS
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
DFS
IF(AV)
1A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
50 A
IR
5 μA
VF at IF = 1.0 A
1.1 V
TJ max.
150 °C
Diode variations
Quad
Case: DFS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
DF005S
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
DF005S
Device marking code
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward output rectified current
at TA = 40 °C (1)
IF(AV)
1.0
A
Peak forward surge current single half sine-wave
superimposed on rated load
IFSM
50
A
I2t
10
A2s
TJ, TSTG
- 55 to + 150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note
(1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
1.0 A
TA = 25 °C
TA = 125 °C
Typical junction capacitance per
diode (1)
VF
IR
CJ
1.1
5.0
500
25
V
μA
pF
Note
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Revision: 19-Aug-13
Document Number: 88573
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
