MOTOROLA
Order this document
by 2N7002LT1/D
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel Enhancement
2N7002LT1
3 DRAIN
Motorola Preferred Device
1
GATE
3
2 SOURCE
1
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
ID
ID
IDM
± 115
± 75
± 800
mAdc
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous TC = 25°C(1)
Drain Current — Continuous TC = 100°C(1)
Drain Current — Pulsed(2)
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
CASE 318 – 08, STYLE 21
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
°C/W
300
mW
mW/°C
RθJA
417
°C/W
TJ, Tstg
Junction and Storage Temperature
556
2.4
Thermal Resistance, Junction to Ambient
mW
mW/°C
PD
Total Device Dissipation
Alumina Substrate,(4) TA = 25°C
Derate above 25°C
225
1.8
RθJA
Thermal Resistance, Junction to Ambient
Unit
PD
Total Device Dissipation FR–5 Board,(3) TA = 25°C
Derate above 25°C
Max
– 55 to +150
°C
DEVICE MARKING
2N7002LT1 = 702
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
—
—
Vdc
IDSS
—
—
—
—
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
—
—
100
nAdc
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
IGSSR
—
—
–100
nAdc
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
1.
2.
3.
4.
TJ = 25°C
TJ = 125°C
The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
FR–5 = 1.0 x 0.75 x 0.062 in.
Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1998
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