FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-12101-2E
MEMORY
CMOS 2 × 128K × 32
SYNCHRONOUS GRAM
MB81G83222-010/-012/-015
CMOS 2 BANKS OF 131,072-WORDS × 32-BIT
SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY
s DESCRIPTION
The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory (SGRAM) containing
8,388,608 memory cells accessible in an 32-bit format. The MB81G83222 features a fully synchronous operation
referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high
performance and simple user interface coexistence. The MB81G83222 SGRAM is designed to reduce the
complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and
may improve data bandwidth of memory as much as 5 times more than a standard DRAM.
The MB81G83222 is ideally suited for Graphics workstations, laser printers, high resolution graphic adapters,
accelerators and other applications where an extremely large memory and bandwidth are required and where a
simple interface is needed.
s ABSOLUTE MAXIMUM RATINGS (See NOTE)
Parameters
Symbol
Value
Unit
Voltage of VCC Supply relative to VSS
VCC, VCCQ
–0.5 to +4.6
V
Voltage at any pin relative to VSS
VIN, VOUT
–0.5 to +4.6
V
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.2
W
TSTG
–55 to +125
°C
Storage Temperature
NOTE: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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