LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
LBSS139LT1G
S-LBSS139LT1G
N–Channel SOT–23
3
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
•
1
Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
2
• Miniature SOT–23 Surface Mount Package saves board space
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
• ESD Protected:1500V
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
SOT– 23 (TO–236AB)
200 mAMPS
50 VOLTS
R DS(on) = 3.5 W
N - Channel
3
ORDERING INFORMATION
d
Device
Package
Shipping
LBSS139LT1G
S-LBSS139LT1G
LBSS139LT3G
S-LBSS139LT3G
SOT–23
3000 Tape & Reel
SOT–23
10000 Tape & Reel
1
g
s
2
MAXIMUM RATINGS (TA = 25 o C unless otherwise noted)
Rating
Value
Unit
VDSS
50
Vdc
Gate–to–Source Voltage – Continuous
VGS
± 20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
ID
IDM
200
800
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
RθJA
556
°C/W
TL
260
MARKING DIAGRAM
& PIN ASSIGNMENT
°C
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
mA
J2
M
Drain–to–Source Voltage
Symbol
J2 = Device Code
M = Month Code
Rev .A 1/6