Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
CD1N4148
DO-35, 500mW
MARKING: Cathode band
+
4148
( no body coat)
General purpose applications. Hermetically sealed glass and the glass passivated chip Provides
excellent stability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C otherwise specified)
DESCRIPTION
SYMBOL
VRRM
Peak Repetitive Reverse Voltage
VR
Reverse Voltage (Continuous)
IF(AV)
Average Forward Current
IF
Forward Current (DC)
IFRM
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current tp=1usec IFSM
IFSM
tp=1sec
PTA
Power Dissipation
Derating Factor
Tj, Tstg
Operating & Storage Junction Temperature
Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Forward Voltage
Reverse Current
VF
IR
Reverse Breakdown Voltage
VBR
DYNAMIC CHARACTERISTICS
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Cd
Vfr
trr
Continental Device India Limited
IF=10mA
VR=20V
VR=75V
IR=100uA
IR=20uA
VR=0V, f=1MHz
IF=50mA, tr=20ns
IF=10mA, to IR=60mA
RL=100ohms
Measured @ IR=1mA
Data Sheet
VALUE
80
75
150
200
450
2000
500
500
2.85
-65 to +200
UNIT
V
V
mA
mA
mA
mA
mA
mW
mW/deg C
deg C
MIN
UNIT
TYP MAX
80
75
-
1.0
500
20
-
V
nA
uA
V
V
-
-
4.0
2.5
4.0
pF
V
ns
Page 1 of 3