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BAV23
BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration NXP JEDEC BAV23A SOT23 TO-236AB dual common anode BAV23C SOT23 TO-236AB dual common cathode BAV23S SOT23 TO-236AB dual series BAV23 SOT143B - dual isolated 1.2 Features and benefits High switching speed: trr 50 ns Low leakage current Repetitive peak reverse voltage: VRRM 250 V Low capacitance: Cd 2 pF Small SMD plastic package 1.3 Applications High-speed switching at high voltage High-voltage general-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 200 V - - 100 nA VR reverse voltage - - 200 V - - 50 ns Per diode trr [1] reverse recovery time [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
TI
Texas Instruments Incorporated
U.S.A
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