HOME＞在庫検索＞在庫情報
HBCR2312B1
Si2312BDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 4.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC 5.0 0.047 at VGS = 1.8 V 20 RDS(on) (Ω) Qg (Typ.) 4.1 7.5 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312BDS (M2)* * Marking Code Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C Pulsed Drain Currentb ID L = 0.1 mH Single Avalanche Energy a 5.0 3.9 3.1 Power Dissipationa TA = 25 °C TA = 70 °C 15 IAS 8.45 PD mJ 1.0 0.63 1.25 0.75 0.80 0.48 TJ, Tstg Operating Junction and Storage Temperature Range A 13 EAS IS Continuous Source Current (Diode Conduction) V 4.0 IDM Avalanche Currentb Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 80 100 120 166 50 Unit 60 °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73235 S10-0791-Rev. D, 05-Apr-10 www.vishay.com 1
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
