DUAL
NPN
SILICON
@
e
e
e
e
e
e
ANNULAR*TRANSISTORS
. . . especially designed for low-level,
differential amplifier applications.
@
low-noise
e
s High Breakdown Voltage
BVCEO= 70 Vdc typical
o Very High Beta Guaranteed
,.$:>.
,.,p~ ..*.
s Beta Match as tight as 0.9 to 1
6-LEAD TO-5
6-LEAD TO-18
2;::;2
o
as low as 3.0 db max at f = 1 kc
2;:;
2N2979
2N2920
oo
04
,.,&i
\~
\
ABSOLUTE
MMIMUM
RATINGS
:+
otherwise noted)
~ ‘*,,,,<, \,
.. ,. ,...
2N2919-20
2N2978-79
2N2972-77
Collector-Base
60
60
6
%20
10
Electrically
Bottom View
Isolated
From
Case
Vdc
45
Voltage
6
Pin Connections,
All Leads
45
Voltage
Collector-Emitter
Unit
‘5
+0
%
10
$,j\,
~&291 3-]8
%
3
20
%
J,+ , ‘ Rating
‘~z~~%$
.x>
Characteristics
04
05
.t7<,\
\
(TAeq~~{f@\eSS
;3
Vdc
.+.
Emitter-Base
Voltige
w’:)
.>
“t:~p$,~~
--- ~,~:r..
DC Collector Curre~.. ‘$,
.! . ‘I’$
1
>&.,
.,i$,,
~f’i..
Jmction Temp~fa@)e/,*
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,,,,,..,~:,\
,(
Storage Te#per~&Te
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,...
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8
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.
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.
~nge
s,.<}.
To/~yYce
Dissipation @ TA= 25° C
>\,,
...
TO?$ Case
Derate above 25° C
6
Vdc
30
mAdc
+200
‘c
-65 to +200
“c
VEBO
lC
‘J
T
Stg
ONE SIDE
BOTH SIDES
PD
300
600
1.7
3.4
250
1.43
1.72
mW
mW/O C
TO-5 Case
Derate above 25° C
750
4.3
1500
8.6
mW
mW/O C
TO-18 Case
Derate above 25° C
500
2.85
750
4.3
mW
mW~ C
TO-18 Case
Derate above 25° C
Total Device Dissipation @ Tc= 250 C
mPatents
300
mW
mW/O C
PD
TO-5 TYPE
TO-18 TYPE
2N2972-79
2N2913-20
pending
A
@
SUBSIDIARY
OF
MOTOROLA
INC.