SSM3J115TU
TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
SSM3J115TU
High-Speed Switching Applications
Power Management Switch Applications
2.1±0.1
Ron = 353 mΩ (max) (@VGS = −1.5 V)
Ron = 193 mΩ (max) (@VGS = −1.8 V)
Ron = 125 mΩ (max) (@VGS = −2.5 V)
Ron = 98 mΩ (max) (@VGS = −4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Drain-source voltage
Gate-source voltage
DC
Pulse
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Rating
Unit
VDS
VGSS
ID
IDP
−20
±8
−2.2
−4.4
800
500
150
−55~150
V
V
3
2
PD (Note 1)
PD (Note 2)
Tch
Tstg
0.166±0.05
Symbol
1
0.7±0.05
Characteristic
+0.1
0.3 -0.05
1.7±0.1
0.65±0.05
1.5 V drive
Low ON-resistance:
2.0±0.1
•
•
Unit: mm
A
mW
1: Gate
2: Source
UFM 3: Drain
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
2
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm )
Note 2: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX
Drain-source breakdown voltage
ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±1
μA
−0.3
⎯
−1.0
V
S
Forward transfer admittance
Drain-source ON-resistance
Vth
VDS = −3 V, ID = −1 mA
⏐Yfs⏐
VDS = −3 V, ID = − 0.9 A
(Note 3)
2.7
5.4
⎯
ID = −1.0 A, VGS = −4.0 V
Gate threshold voltage
(Note 3)
⎯
77
98
ID = −1.0 A, VGS = −2.5 V
ID = −1.0 A, VGS = −1.8 V
ID = −0.1 A, VGS = −1.5 V
(Note 3)
⎯
⎯
⎯
84
111
126
125
193
353
mΩ
RDS (ON)
(Note 3)
(Note 3)
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
568
⎯
pF
Output capacitance
Coss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
75
⎯
pF
Reverse transfer capacitance
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
67
⎯
pF
VDD = −10 V, ID = −0.9 A,
VGS = 0~−2.5 V, RG = 4.7 Ω
⎯
29
⎯
⎯
39
⎯
⎯
0.8
1.2
Switching time
Turn-on time
ton
Turn-off time
toff
Drain-source forward voltage
VDSF
ID = 2.2 A, VGS = 0 V
1
(Note 3)
ns
V
2007-11-01
