2SK2884
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2884
Chopper Regulator, DC−DC Converter Applications
Low drain−source ON resistance
: RDS (ON) = 1.9 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 3.8 S (typ.)
: IDSS = 100 µA (max) (VDS = 640 V)
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Low leakage current
Enhancement mode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
800
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
800
V
Gate−source voltage
VGSS
±30
V
ID
5
A
IDP
15
A
Drain power dissipation
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
370
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
(Note 1)
Pulse (Note 1)
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
83.3
°C / W
JEDEC
―
Note 1: Ensure that the channel temperature does not exceed 150°C.
JEITA
―
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 Ω,
IAR = 5 A
TOSHIBA
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
2-10S2B
Weight: 1.5 g (typ.)
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-10
