2SK2836
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2836
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
: RDS (ON) = 6.4 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 0.85 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V)
Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
600
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
1
A
Pulse (Note 1)
IDP
2
A
(Note 2)
PD
2.5
W
Single pulse avalanche energy
(Note 3)
EAS
56
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 4)
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
DC
Drain current
Drain power dissipation
JEDEC
—
JEITA
—
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
Max
Unit
Rth (ch−a)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 Ω, IAR = 1 A
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-04
