RN1001∼RN1006
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003
RN1004,RN1005,RN1006
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2001~RN2006
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1001
4.7
4.7
RN1002
10
10
RN1003
22
22
RN1004
47
47
RN1005
2.2
47
RN1006
4.7
47
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN1001~1006
RN1001~1004
RN1005, 1006
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
10
VEBO
5
V
IC
RN1001~1006
100
mA
PC
400
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
