RN1007∼RN1009
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1007,RN1008,RN1009
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2007~RN2009
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1007
10
47
RN1008
22
47
RN1009
47
22
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21g (typ.)
V
RN1007
Emitter-base voltage
RN1008
6
VEBO
RN1009
7
V
15
Collector current
IC
100
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
