FDP7042L / FDB7042L
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) .
• 50 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 4.5 V
RDS(ON) = 7.5 mΩ @ VGS = 10 V
• Critical DC electrical parameters specified at
elevated temperature
Applications
• High performance trench technology for extremely
low RDS(ON)
• Synchronous rectifier
• DC/DC converter
• 175°C maximum junction temperature rating
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
A
– Continuous
(Note 1)
50
– Pulsed
(Note 1)
150
PD
Total Power Dissipation @ TC = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
83
Derate above 25°C
W
0.48
W°C
-65 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.8
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
FDB7042L
FDP7042L
2000 Fairchild Semiconductor Corporation
Reel Size
Tape width
Quantity
FDB7042L
13’’
24mm
800 units
FDP7042L
Tube
n/a
45
FDP7042L Rev C(W)
FDP7042L / FDB7042L
April 2001
FDP7042L / FDB7042L
Typical Characteristics
2
150
VGS = 4.5V
3.5V
4.0V
120
1.8
VGS = 2.5V
1.6
3.0V
90
3.0V
1.4
3.5V
60
1.2
4.0V
2.5V
4.5V
30
1
0.8
0
0
1
2
3
4
0
5
30
60
90
120
150
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
2
ID =25A
VGS = 4.5V
1.8
ID = 25 A
0.02
1.6
1.4
0.015
o
TA = 125 C
1.2
0.01
1
0.8
o
TA = 25 C
0.005
0.6
0.4
0
-50
-25
0
25
50
75
100
125
150
175
2
2.5
o
TJ, JUNCTION TEMPERATURE ( C)
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
VGS = 0V
VDS = 5V
10
o
60
TA = 125 C
1
o
25 C
40
o
-55 C
0.1
o
TA = 125 C
o
25 C
20
0.01
o
-55 C
0.001
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7042L Rev C(W)
