FDD2612
200V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 4.9 A, 200 V.
RDS(ON) = 720 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
Applications
• Fast switching speed
• DC/DC converter
• Low gate charge (8nC typical)
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
200
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
4.9
A
– Continuous
(Note 1a)
– Pulsed
PD
10
Power Dissipation
W
42
3.8
(Note 1b)
TJ, TSTG
(Note 1)
(Note 1a)
1.6
−55 to +175
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD2612
FDD2612
13’’
16mm
2500 units
2001 Fairchild Semiconductor Corporation
FDD2612 Rev B1 (W)
FDD2612
August 2001
FDD2612
Typical Characteristics
5
1.3
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS =10V
ID, DRAIN CURRENT (A)
6.0V
6.5V
4
3
5.5V
2
1
0
0
2
4
6
8
10
VGS = 5.5V
1.2
6.0V
1.1
6.5V
1
0.9
12
0
1
VDS, DRAIN-SOURCE VOLTAGE (V)
2
3
4
5
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
1.4
ID = 0.8A
RDS(ON), ON-RESISTANCE (OHM)
ID = 1.5A
VGS = 10V
2.2
1.8
1.4
1
0.6
1.2
TA = 125oC
1
0.8
0.6
TA = 25oC
0.2
0.4
-50
-25
0
25
50
75
100
125
150
175
4
5
6
o
TJ, JUNCTION TEMPERATURE ( C)
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
IS, REVERSE DRAIN CURRENT (A)
VDS = 25V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
7.5V 10V
6
4
TA = 125oC
2
25oC
-55oC
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
7
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD2612 Rev B1(W)
