FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
• –20 V, –2.4 A.
RDS(ON) = 0.055 Ω @ VGS = –4.5 V
RDS(ON) = 0.080 Ω @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
Applications
• Power management
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
• Load switch
• Battery protection
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Drain-Source Voltage
Ratings
–20
Units
VDSS
Parameter
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
–2.4
–10
A
(Note 1a)
0.5
W
– Continuous
– Pulsed
PD
Maximum Power Dissipation
(Note 1b)
TJ, TSTG
V
0.46
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
302
FDN302P
7’’
8mm
3000 units
2000 Fairchild Semiconductor Corporation
FDN302P Rev C(W)
FDN302P
October 2000
FDN302P
Typical Characteristics
3
15
-3.5V
-3.0V
-2.5V
-4.0V
12
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4.5V
9
6
-2.0V
3
VGS = -2.0V
2.5
2
-2.5V
1.5
-3.0V
-3.5V
-4.0V
1
-4.5V
0.5
0
0
0.5
1
1.5
2
0
2.5
3
6
Figure 1. On-Region Characteristics.
15
0.16
ID = -1.2 A
ID = -2.4A
VGS = -4.5V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
0.14
0.12
0.1
TA = 125oC
0.08
0.06
TA = 25oC
0.04
0.02
150
1.5
TJ, JUNCTION TEMPERATURE (oC)
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
12
25oC
-IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
VDS = - 5V
10
-ID, DRAIN CURRENT (A)
9
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
-55oC
8
6
4
2
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN302P Rev C(W)
