FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
• –20 V, –1.5 A.
RDS(ON) = 125 mΩ @ VGS = –4.5 V
RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
Applications
• Power management
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
• Load switch
• Battery protection
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
–1.5
A
– Continuous
– Pulsed
(Note 1a)
–10
Maximum Power Dissipation
(Note 1a)
PD
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
0.5
W
0.46
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
°C/W
(Note 1)
RθJA
75
°C/W
Package Marking and Ordering Information
Device Marking
308
2001 Fairchild Semiconductor Corporation
Device
FDN308P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
FDN308P Rev B(W)
FDN308P
February 2001
FDN308P
Typical Characteristics
10
-ID, DRAIN CURRENT (A)
-3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
VGS = -4.5V
-4.0V
-3.0V
8
6
-2.5V
4
-2.0V
2
1.8
VGS = -2.5V
1.6
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
0
0
1
2
3
0
4
2
4
Figure 1. On-Region Characteristics.
8
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.34
1.5
ID = -0.8 A
ID = -1.5A
VGS = -4.5V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
0.3
0.26
0.22
TA = 125oC
0.18
0.14
TA = 25oC
0.1
0.06
150
1
o
2
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
-IS, REVERSE DRAIN CURRENT (A)
10
o
TA = -55 C
VDS = - 5V
o
25 C
8
o
125 C
6
4
2
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN308P Rev B(W)
