FDR6580
N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 11.2 A, 20 V.
Applications
• High power and current handling capability in a
RDS(ON) = 9 mΩ @ VGS = 4.5 V
RDS(ON) = 11 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely
low RDS(ON)
smaller footprint than SO8
• Synchronous rectifier
• DC/DC converter
S
D
5
D
TM
SuperSOT -8
D
2
8
1
D
Absolute Maximum Ratings
Symbol
3
7
G
4
6
D
S
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
11.2
A
PD
Power Dissipation for Single Operation
(Note 1a)
1.8
(Note 1b)
1.0
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
W
0.9
-55 to +150
°C
(Note 1a)
70
°C/W
(Note 1)
20
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDR6580
FDR6580
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDR6580 Rev C(W)
FDR6580
July 2001
FDR6580
Typical Characteristics
100
2
VGS = 4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
3.0
80
2.0V
60
40
20
0
0
0.5
1
1.5
2
2.5
1.8
VGS = 2.0V
1.6
1.4
2.5V
1.2
3.0V
4.5V
0.8
3
0
20
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.016
ID = 11.2A
VGS = 4.5V
ID = 5.6A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
0.014
0.012
o
TA = 125 C
0.01
0.008
TA = 25oC
0.006
0.004
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
100
o
IS, REVERSE DRAIN CURRENT (A)
25 C
TA = -55oC
VDS = 5V
o
125 C
ID , DRAIN CURRENT (A)
3.5V
1
60
40
20
VGS = 0V
10
o
TA = 125 C
1
25oC
0.1
o
-55 C
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDR6580 Rev C(W)
