FDR6674A
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
RDS(ON) = 8.5 mΩ @ VGS = 10 V
Applications
• High power and current handling capability in a
smaller footprint than SO8
• High performance trench technology for extremely
low RDS(ON)
• Synchronous rectifier
• DC/DC converter
D
S
5
D
TM
SuperSOT -8
D
2
8
1
D
Absolute Maximum Ratings
Symbol
3
7
G
4
6
D
S
TA=25oC unless otherwise noted
Parameter
VDSS
VGSS
Drain Current
(Note 1a)
– Pulsed
V
±12
– Continuous
Units
30
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
V
11.5
A
50
Power Dissipation for Single Operation
(Note 1a)
1.8
(Note 1b)
PD
1.0
(Note 1c)
TJ, TSTG
W
0.9
-55 to +150
°C
(Note 1a)
70
°C/W
(Note 1)
20
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.6674A
FDR6674A
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDR6674A Rev D(W)
FDR6674A
April 2001
FDR6674A
Typical Characteristics
50
1.5
VGS = 4.5V
3.5V
3.0V
40
VGS = 2.5V
2.5V
1.3
30
2.0V
3.0V
20
1.1
3.5V
4.0V
4.5V
10
0.9
0
0
0.5
1
0
1.5
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
1.8
ID = 5.8 A
ID = 11.5A
VGS = 10V
1.6
0.02
1.4
1.2
0.015
o
TA = 125 C
1
0.01
0.8
o
TA = 25 C
0.6
0.005
-50
-25
0
25
50
75
100
125
150
1
2.5
o
TJ, JUNCTION TEMPERATURE ( C)
4
5.5
7
8.5
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
VGS = 0V
VDS = 5V
10
o
45
TA = 125 C
1
o
25 C
30
o
-55 C
0.1
o
o
TA = 125 C
25 C
15
0.01
o
-55 C
0.001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDR6674A Rev D(W)
