FDS3580
80V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
•
7.6 A, 80 V. RDS(ON) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
•
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
D
Low gate charge (34nC typical).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
•
High power and current handling capability.
D
5
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
6
D
1
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
80
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
±20
7.6
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
A
50
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS3580
FDS3580
13’’
12mm
2500 units
2000 Fairchild Semiconductor International
FDS3580 Rev. C
FDS3580
December 2000
FDS3580
Typical Characteristics
60
2
ID, DRAIN CURRENT (A)
5.0V
6.0V
50
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
4.5V
40
30
4.0V
20
10
3.5V
0
1.8
VGS = 4.0V
1.6
1.4
4.5V
5.0V
1.2
6.0V
1
2
3
4
5
0
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
60
ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
2
0.06
ID = 7.6A
VGS = 10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
0.8
0
1.6
1.4
1.2
1
0.8
0.6
0.4
ID = 3.8A
0.05
TA = 125oC
0.04
0.03
0.02
TA = 25oC
0.01
0
-50
-25
0
25
50
75
100
125
150
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
TA = -55oC
VDS = 5V
50
IS, REVERSE DRAIN CURRENT (A)
60
ID, DRAIN CURRENT (A)
7.0V
25oC
o
125 C
40
30
20
10
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
FDS3580 Rev. C
