FDS4435A
P-Channel Logic Level PowerTrench® MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductors advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery
charging circuits, and DC/DC conversion.
D
-9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V
RDS(ON) = 0.025 W @ VGS = -4.5 V
Low gate charge (21nC typical).
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
5
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
6
D
1
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
-9
A
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
-50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS4435A
FDS4435A
13’’
12mm
2500 units
ã2001 Fairchild Semiconductor Corporation
FDS4435A Rev. D
FDS4435A
October 2001
FDS4435A
Typical Characteristics
2.4
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
- I D, DRAIN-SOURCE CURRENT (A)
VGS= -10V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
2.2
VGS = -3.5V
2
1.8
-4.0V
1.6
-4.5V
-5.0V
1.4
-6.0V
-7.0V
1.2
-8.0V
-10V
1
0.8
0
-V DS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
0.07
1.6
RDS(ON), ON RESISTANCE (OHM)
VGS = -10V
ID = -9A
1.4
1.2
1
0.8
ID = -4.5A
0.06
0.05
0.04
O
0.03
TJ = 125 C
0.02
O
TJ = 25 C
0.01
0
0.6
-50
-25
0
25
50
75
100
125
2
150
4
TJ, JUNCTION TEMPERATURE (OC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
100
40
TJ = -55 C
-IS, REVERSE DRAIN CURRENT (A)
O
VDS = -5V
-ID, DRAIN CURRENT (A)
20
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
NORMALIZED ON-RESISTANCE
10
O
25 C
O
30
125 C
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
FDS4435A Rev. D
