FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
Features
This P
-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
• –8.8 A, –30 V
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 20 mΩ @ V GS = –10 V
RDS(ON) = 35 mΩ @ V GS = –4.5 V
• Low gate charge (17nC typical)
• Load switch
• Battery protection
• High power and current handling capability
DD
D
D
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
G
S G
S S
S S
S
4
6
SO-8
5
7
D
D
DD
1
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–30
V
V GSS
Gate-Source Voltage
±25
V
ID
Drain Current
–8.8
A
– Continuous
(Note 1a)
– Pulsed
PD
–50
Power Dissipation for Single Operation
2.5
(Note 1b)
1.2
(Note 1c)
TJ , TSTG
(Note 1a)
1
Operating and Storage Junction Temperature Range
W
–55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4435
FDS4435
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4435 Rev F1(W)
FDS4435
October 2001
FDS4435
Typical Characteristics
2
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
40
-4.5V
V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
-4.0V
30
-3.5V
20
-3.0V
10
0
V GS=-4.5V
1.8
1.6
-4.5V
-5.0V
1.4
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
1
2
3
0
10
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
50
0.07
ID = -8.8A
V GS = -10V
ID = -4.4A
RDS(ON) ON-RESISTANCE (OHM)
,
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
0.06
0.05
0.04
TA = 125 oC
0.03
0.02
T A = 25o C
0.01
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
-V GS, GATE TO SOURCE VOLTAGE (V)
T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V DS = -5V
o
T A = -55 C
-IS , REVERSE DRAIN CURRENT (A)
40
-I D, DRAIN CURRENT (A)
20
-I D, DRAIN CURRENT (A)
25o C
30
125oC
20
10
0
1.5
2
2.5
3
3.5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
V GS =0V
10
T A = 125o C
1
25o C
0.1
-55o C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4435 Rev F1(W)
