FDS6912A
Dual N-Channel Logic Level PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 6 A, 30 V.
RDS(ON) = 28 mΩ @ VGS = 10 V
RDS(ON) = 35 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD1
D1
D
D2
D
5
D2
D
6
4
3
Q1
7
SO-8
Pin 1 SO-8
G2
S2 S
8
S
2
Q2
1
S
Absolute Maximum Ratings
Symbol
G1
S1 G
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
6
A
– Continuous
(Note 1a)
– Pulsed
PD
20
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
W
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6912A
FDS6912A
13’’
12mm
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6912A Rev D(W)
FDS6912A
July 2003
FDS6912A
Typical Characteristics
20
2.2
4.0V
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10.0V
ID, DRAIN CURRENT (A)
16
6.0V
4.5V
12
8
3.0V
4
1.8
1.4
0
4.5V
5.0
6.0V
10.0V
1
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
Figure 1. On-Region Characteristics.
4
8
12
ID, DRAIN CURRENT (A)
16
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.08
ID = 3A
ID = 6A
VGS = 10.0V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0
0.6
0
1.4
1.2
1
0.8
0.07
0.06
0.05
TA = 125oC
0.04
0.03
TA = 25oC
0.02
0.01
0.6
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
2
150
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
16
ID, DRAIN CURRENT (A)
VGS = 3.5V
12
TA = 125oC
-55oC
8
25oC
4
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6912A Rev D(W)
