SEMICONDUCTOR
KTD863
TECHNICAL DATA
TRIPLE DIFFUSED NPN TRANSISTOR
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
B
D
FEATURES
A
・High Voltage : VCEO=60V(Min.).
・High Current : IC(Max.)=1A.
DIM
A
B
C
D
・High Transition Frequency : fT=150MHz(Typ.).
G
C
・Wide Area of Safe Operation.
S
Q
・Complementary to KTB764.
R
J
K
F
F
H
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
DC
IC
Pulse
ICP
2
Collector Power Dissipation
PC
1
Tj
150
-55～150
25
1.25
Φ1.50
0.10 MAX
_
12.50 + 0.50
1.00
℃
Tstg
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
W
Junction Temperature
E
F
G
H
J
K
L
M
1
℃
1
O
CHARACTERISTIC
H
M
D
MAXIMUM RATING (Ta=25℃)
H
E
M
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
N
O
P
DEPTH:0.2
N
2
3
H
L
P
Q
R
S
N
1. EMITTER
Collector Current
2. COLLECTOR
3. BASE
A
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
1
μ
A
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
1
μ
A
hFE(1)
VCE=2V, IC=50mA
60
-
320
hFE(2)
VCE=2V, IC=1A
30
-
-
IC=1mA, IB=0
60
-
-
V
DC Current Gain
Collector-Emitter Breakdown Voltage
V(BR)CEO
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
-
0.15
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
-
0.85
1.2
V
fT
VCE=10V, IC=50mA
-
150
-
MHz
VCB=10V, f=1MHz, IE=0
-
12
-
pF
Transition Frequency
Collector Output Capacitance
Cob
Note : hFE(1) Classification O:60～120, Y:100～200, GR:160～320
2012. 11. 02
Revision No : 2
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