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部品型式

RN1301

製品説明
仕様・特性

RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301, RN1302, RN1303 RN1304, RN1305, RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2301 to RN2306 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN1301 4.7 4.7 RN1302 10 10 RN1303 22 22 RN1304 47 47 RN1305 2.2 47 RN1306 4.7 47 USM JEDEC JEITA TOSHIBA Weight: 6 mg (typ.) ― SC-70 2-2E1A Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol RN1301 to 1306 RN1301 to 1304 RN1305, 1306 Collector current Collector power dissipation Junction temperature Storage temperature range Rating Unit VCBO 50 V VCEO 50 V 10 VEBO 5 V IC RN1301 to 1306 100 mA PC 100 mW Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1987-09 1 2014-03-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
Not pic File
データシート
pdf

提携先在庫情報

型式 数量 D/C・lead 備考 選択
RN1301(TE85L,F)    
RN1301(TE85L,F) 8850個    
RN1301(TE85LF) 2900個    
RN1301TE85L 5391個    
RN1301TE85R 3688個    
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