HL6319G/20G
ODE2011-00 (M)
Rev.0
Aug. 01, 2008
AlGaInP Laser Diodes
Description
The HL6319G/20G are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers and optical equipment for measurement.
Features
•
•
•
•
•
•
Package Type
• HL6319G/20G: G2
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 10 mW CW
Low operating current: 95 mA Max
Low operating voltage: 2.7 V Max
TM mode oscillation
Internal Circuit
• HL6319G
1
Internal Circuit
• HL6320G
1
3
PD
LD
3
PD
2
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
Ratings
10
2
30
–10 to +50
–40 to +85
PO
VR(LD)
VR(PD)
Topr
Tstg
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Operating current
Operating voltage
Symbol
Ith
IOP
VOP
Min
20
—
—
Typ
50
70
—
Max
75
95
2.7
Unit
mA
mA
V
Slope efficiency
ηs
0.3
0.5
0.7
mW/mA
Beam divergence
parallel to the junction
θ//
5
8
11
°
6 (mW) / (I(8mW) – I(2mW))
PO = 10 mW
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
θ⊥
25
31
37
°
PO = 10 mW
AS
λp
IS
—
625
0.05
5
635
0.17
—
640
0.30
μm
nm
mA
Rev.0 Aug. 01, 2008 page 1 of 4
Test Conditions
—
PO = 10 mW
PO = 10 mW
PO = 10 mW, NA = 0.55
PO = 10 mW
PO = 10 mW, VR(PD) = 5 V