FW356
FW356
Ordering number : ENN7743
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
Features
•
•
For motor drives, inverters.
The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
ultrahigh-speed switching, and 4V drive, thereby enabling high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
Conditions
N-channel
VDSS
VGSS
V
±20
V
5
--3.5
A
14
--14
A
2.0
W
2.3
PW≤10µs, duty cycle≤1%
W
Mounted on a ceramic board
PD
Total Dissipation
Unit
--60
±20
ID
IDP
Allowable Power Dissipation
P-channel
60
PT
(1200mm2✕0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(1200mm2✕0.8mm), PW≤10s
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
5
Static Drain-to-Source On-State Resistance
Input Capacitance
V(BR)DSS
IDSS
ID=1mA, VGS=0
IGSS
VGS(off)
VGS=±16V, VDS=0
VDS=10V, ID=1mA
yfs
RDS(on)1
VDS=10V, ID=3A
RDS(on)2
Ciss
60
V
VDS=60V, VGS=0
1
±10
1.2
4
µA
µA
2.6
6
V
S
ID=3A, VGS=10V
43
58
mΩ
ID=3A, VGS=4V
56
84
mΩ
VDS=20V, f=1MHz
790
Output Capacitance
Coss
VDS=20V, f=1MHz
115
pF
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
88
pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Rev.0 I Page 1 of 6 I www.onsemi.com
Publication Order Number:
FW356/D