Preliminary Datasheet
RJK0631JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
R07DS0252EJ0300
Rev.3.00
Jul 24, 2013
Features
•
•
•
•
•
For Automotive application
Low on-resistance : RDS(on) = 12 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance: Ciss = 1350 pF typ
AEC-Q101 compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
1. Gate
2. Drain
3. Source
4. Drain
1 G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note2
Value
60
±20
30
120
30
120
27
Unit
V
V
A
A
A
A
A
EAR Note2
Pch Note3
Tch Note4
Tstg
62.5
45
175
–55 to +150
mJ
W
°C
°C
Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 3.33°C/W
R07DS0252EJ0300 Rev.3.00
Jul 24, 2013
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