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1SS250TE85L,F
1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Application Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 60ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Peak reverse voltage Symbol Rating Unit VRM 250 V Reverse voltage VR 200 V Peak forward current IFM 300 mA Average forward current IO 100 mA Surge current (10 ms) Power dissipation Junction temperature Storage temperature range IFSM 2 A P 150 mW Tj 125 °C Tstg −55 to 125 °C JEDEC − JEITA SC−59 TOSHIBA 1−3G1B Weight: 0.012g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) ― VF (2) Min Typ. Max IF = 10mA ― 0.72 1.00 ― IF = 100mA ― 0.90 1.20 IR (1) ― VR = 50V ― ― 0.1 IR (2) ― VR = 200V ― ― 1.0 Total capacitance CT ― VR = 0, f = 1MHz ― 1.5 3.0 pF Reverse recovery time trr ― IF = 10mA (Fig.1) ― 10 60 ns Characteristic Forward voltage Reverse current Test Condition Fig.1 Reverse recovery time (trr) test circuit Unit V μA Marking Start of commercial production 1984-05 1 2014-03-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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